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8 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C
Data Sheet
AC Characteristics
Table 17: Read Cycle Timing Parameters V DD = 2.7-3.6V
SST39VF801C/802C
SST39LF801C/802C
Symbol
Parameter
Min
Max
Min
Max
Units
T RC
T CE
T AA
T OE
T CLZ1
T OLZ1
T CHZ1
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
70
0
0
70
70
35
20
55
0
0
55
55
30
15
ns
ns
ns
ns
ns
ns
ns
T OHZ
1
OE# High to High-Z Output
20
15
ns
T OH1
T RP1
T RHR1
Output Hold from Address Change
RST# Pulse Width
RST# High before Read
0
500
50
0
500
50
ns
ns
ns
T RY
1,2
RST# Pin Low to Read Mode
20
20
μs
T17.3 25041
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase and Program operations.
This parameter does not apply to Chip-Erase operations.
Table 18: Program/Erase Cycle Timing Parameters
Symbol
Parameter
Min
Max
Units
T BP
T AS
T AH
T CS
T CH
T OES
T OEH
T CP
T WP
T WPH1
T CPH1
T DS
T DH1
T IDA1
T SE
T BE
T SCE
T BY1,2
T BR1
Word-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Block-Erase
Chip-Erase
RY/BY# Delay Time
Bus Recovery Time
0
30
0
0
0
10
40
40
30
30
30
0
10
150
25
25
50
90
0
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
ns
μs
T18.1 25041
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
?2011 Silicon Storage Technology, Inc.
19
DS25041A
05/11
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